The 29LE512 is a 64K x 8 CMOS page mode EEPROM manufactured with SST's proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturabi lity compared with alternate approaches. The 29LE512 writes with a 3.0-volt-only power supply. (VCC: 3.0V to 3.6V) Internal erase/program is transparent to the user. The 29LE512 conforms to JEDEC standard pinouts for byte-wide memories.
Featuring high performance page write, the 29LE512 provides a typical byte-write time of 39 sec. The entire memory, i.e., 64K bytes, can be written page by page in as little as 2.5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of a write cycle. To protect against inadvertent write, the 29LE512 has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the 29LE512 is offered with a guaranteed page-write endurance of 104 or 103 cycles. Data retention is rated at greater than 100 years.
The 29LE512 is suited for applications that require convenient and economical updating of program,configuration, or data memory. For all system applications, the 29LE512 significantly improves performance and reliability, while lowering power consumption, when compared with floppy disk or EPROM approaches. The 29LE512 improves flexibility while lowering the cost for program, data,and configuration storage applications.
To meet high density, surface mount requirements,the 29LE512 is offered in 32-pin TSOP and 32-lead PLCC packages. A 600-mil, 32-pin PDIP package is also available. See Figures 2A and 2B for pinouts.
Required Field 
